|
Other articles related with "insulated gate bipolar transistors (IGBTs)":
|
68504 |
Zheng-Xin Wen(温正欣), Feng Zhang(张峰), Zhan-Wei Shen(申占伟), Jun Chen(陈俊), Ya-Wei He(何亚伟), Guo-Guo Yan(闫果果), Xing-Fang Liu(刘兴昉), Wan-Shun Zhao(赵万顺), Lei Wang(王雷), Guo-Sheng Sun(孙国胜), Yi-Ping Zeng(曾一平) |
|
|
Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension |
|
|
|
Chin. Phys. B
2019 Vol.28 (6): 68504-068504
[Abstract]
(684)
[HTML 1 KB]
[PDF 1521 KB]
(264)
|
First page | Previous Page | Next Page | Last Page | Page 1 of 1 |
|
|